Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

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Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

Mitsubishi Electric has developed a compact 7GHz band GaN power amplifier module (PAM) for 5G-Advanced base station with what ...

The Ferdinand-Braun-Institut (FBH) will be presenting its range of photonics expertise and solutions at Laser World of ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

This funding has been awarded by the Spanish Ministry of Industry and Tourism under the second call of the Strategic Project ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Working with the company III/V-Reclaim, scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in ...