Compound semiconductor wafer company IQE plc and Quinas Technology, a British semiconductor company, have completed a £1.1 ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Compound Semiconductor™ is an Angel Business Communications publication.

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

This funding has been awarded by the Spanish Ministry of Industry and Tourism under the second call of the Strategic Project ...

Mitsubishi Electric has developed a compact 7GHz band GaN power amplifier module (PAM) for 5G-Advanced base station with what ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

The Ferdinand-Braun-Institut (FBH) will be presenting its range of photonics expertise and solutions at Laser World of ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...